High-performance red electrophosphorescent devices based on all-solution-processed hydrogen-bonded supramolecular material

被引:6
|
作者
Zhang, Cheng [1 ]
Zeng, Hui [1 ]
Huang, Qingyu [2 ]
Wang, Yi [1 ]
Chai, Yongshuai [3 ]
Huang, Yan [1 ]
Zhao, Suling [2 ]
Lu, Zhiyun [1 ]
机构
[1] Sichuan Univ, Coll Chem, Minist Educ, Key Lab Green Chem & Technol, Chengdu 610064, Sichuan, Peoples R China
[2] Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Organ Chem, Interdisciplinary Res Ctr Biol & Chem, Shanghai 200032, Peoples R China
基金
中国国家自然科学基金;
关键词
LIGHT-EMITTING DEVICES; ENERGY-TRANSFER; PHOSPHORESCENT POLYMERS; ELECTRON-TRANSFER; COMPLEXES; BEARING; DENDRIMERS; PROGRESS; DESIGN; UNITS;
D O I
10.1039/c7tc05764d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An oligoamide strand bearing a guest phosphorescent unit, named 4HB-Irpiq, was designed and synthesized. The guest hydrogen-bonded strand 4HB-Irpiq could self-assemble via hydrogen-bonding interactions with the host hydrogen-bonded strand 4HB-CzNI into a hydrogen-bonded supramolecule, named 4HB-Irpiq-CzNI. In comparison with physical blends of the guest counterpart Irpiq with host small molecule CzNI, 4HB-Irpiq-CzNI shows a more efficient energy transfer process between host and guest in both dilute solution and doped film state, which could be attributed to the shortened spatial distance between the host and guest units. Moreover, compared with Irpiq, 4HB-Irpiq-CzNI shows a higher photoluminescence quantum yield in the neat-film state, indicating that 4HB-Irpiq-CzNI could be better at alleviating concentration quenching. As a consequence, a phosphorescent organic light-emitting diode with 4HB-Irpiq-CzNI and Irpiq as the light-emitting dopant has been fabricated based on all-solution-processing. The results indicate that OLEDs with 4HB-Irpiq-CzNI show dramatically improved performance over the counterpart Irpiq: with a lower turn-on voltage (6.0 vs. 7.6 V), higher maximum luminance (6446 vs. 2543 cd m(-2)) and current efficiency (7.0 vs. 4.3 cd A(-1)) as well as a lower efficiency roll-off. The hydrogen-bonded supramolecular 4HB-Irpiq-CzNI material shows one of the best performances among all-solution-processed red PhOLEDs.
引用
收藏
页码:4095 / 4105
页数:11
相关论文
共 50 条
  • [1] Solution-Processed Hydrogen-Bonded Organic Framework Nanofilms for High-Performance Resistive Memory Devices
    Yang, Xue
    Huang, Jian
    Gao, Shuiying
    Zhao, Yanqi
    Huang, Tao
    Li, Hongfang
    Liu, Tianfu
    Yu, Zhiyang
    Cao, Rong
    ADVANCED MATERIALS, 2023, 35 (47)
  • [2] Polylactic acid as a biodegradable material for all-solution-processed organic electronic devices
    Mattana, Giorgio
    Briand, Danick
    Marette, Alexis
    Quintero, Andres Vasquez
    de Rooij, Nico F.
    ORGANIC ELECTRONICS, 2015, 17 : 77 - 86
  • [3] Flexible All-Solution-Processed Organic Solar Cells with High-Performance Nonfullerene Active Layers
    Sun, Lulu
    Zeng, Wenwu
    Xie, Cong
    Hu, Lin
    Dong, Xinyun
    Qin, Fei
    Wang, Wen
    Liu, Tiefeng
    Jiang, Xueshi
    Jiang, Youyu
    Zhou, Yinhua
    ADVANCED MATERIALS, 2020, 32 (14)
  • [4] All-solution-processed high-performance quantum dot light emitting devices employing an inorganic thiocyanate as hole injection layer
    Zhu, Yangbin
    Hu, Hailong
    Liu, Yang
    Chen, Maoshen
    Lin, Wanzhen
    Ye, Yun
    Guo, Tailiang
    Li, Fushan
    ORGANIC ELECTRONICS, 2019, 70 : 279 - 285
  • [5] High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons
    Zhang, Nan
    Tang, Haodong
    Shi, Kanming
    Wang, Weigao
    Deng, Weiqiao
    Xu, Bing
    Wang, Kai
    Sun, Xiao Wei
    APPLIED PHYSICS LETTERS, 2019, 115 (22)
  • [6] High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors
    Han, Guoqiang
    Cao, Shuguang
    Yang, Qian
    Yang, Wenyu
    Guo, Tailiang
    Chen, Huipeng
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (47) : 40631 - 40640
  • [7] A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors
    Song, Keunkyu
    Yang, Wooseok
    Jung, Yangho
    Jeong, Sunho
    Moon, Jooho
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (39) : 21265 - 21271
  • [8] A General One-Pot Strategy for the Synthesis of High-Performance Transparent-Conducting-Oxide Nanocrystal Inks for All-Solution-Processed Devices
    Song, Jizhong
    Kulinich, Sergei A.
    Li, Jianhai
    Liu, Yanli
    Zeng, Haibo
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (02) : 462 - 466
  • [9] All-solution-processed fabrication of electroluminescent devices with stacked blue, green and red quantum dot layers
    Lee, Ki-Heon
    Jang, Eun-Pyo
    Shin, Jong-Woo
    Kim, Bu-Yong
    Yoon, Seok-Young
    Oh, Min Suk
    Yang, Heesun
    2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2017, : 133 - 135
  • [10] High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets
    Weng, Yi-Hsun
    Lin, Yan-Cheng
    Ho, Jin-Chieh
    Yang, Wei-Chen
    Lin, Bi-Hsuan
    Liu, Cheng-Liang
    Chen, Wen-Chang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (15) : 19258 - 19269