InGaAs/GaAsSb/InP terahertz quantum cascade lasers

被引：11

作者：

Deutsch, Christoph ^{[1
,2
]}

Detz, Hermann ^{[2
,3
]}

Zederbauer, Tobias ^{[2
,3
]}

Krall, Michael ^{[1
,2
]}

Brandstetter, Martin ^{[1
,2
]}

Andrews, Aaron M. ^{[2
,3
]}

Klang, Pavel ^{[2
,3
]}

Schrenk, Werner ^{[2
,3
]}

Strasser, Gottfried ^{[2
,3
]}

Unterrainer, Karl ^{[1
,2
]}

机构：

[1] Vienna Univ Technol, Photon Inst, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Ctr Micro & Nanostruct, A-1040 Vienna, Austria

[3] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2013年 / 34卷 / 5-6期

基金：

奥地利科学基金会;

关键词：

Quantum cascade lasers; Terahertz generation; Novel material systems; Antimony materials; Transport in nanostructures; PERFORMANCE; BARRIER;

D O I：

10.1007/s10762-013-9991-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of In0.53Ga0.47As/GaAs0.51Sb0.49 terahertz quantum cascade lasers is reviewed, starting with the first demonstration, through growth direction dependent performance issues, to high performance devices. This InP-based material system is an attractive alternative to the almost exclusively used GaAs/AlxGa1-xAs. Devices achieve maximum operating temperatures of 142 K and exhibit broadband lasing over a range of 660 GHz. A special focus has to be put on the growth direction related interface asymmetry for this material system. Symmetric active region designs are an elegant technique to investigate such asymmetries. A significant impact on the device performance is observed and attributed to interface roughness scattering.

引用

页码：374 / 385

页数：12

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