Magnetoconduction in a two-dimensional system confined in wurtzite AlxGa1-xN/GaN heterostructure

被引:3
|
作者
Cangas, R. [1 ]
Hidalgo, M. A. [2 ]
机构
[1] Univ Politecn Madrid, Dept Fis, Escuela Tecn Ingn Ind, Madrid 28012, Spain
[2] Univ Alcala, Dept Fis, Madrid, Spain
关键词
SPIN; RASHBA; POLARIZATION;
D O I
10.1063/1.4803093
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetoresistivity of a two dimensional electron system confined in a wurtzite Al0.22Ga0.78N/GaN heterostructure has been reproduced using a theoretical model based on a modified semiclassical theory. When an external magnetic field is applied, nodes appear on the beating pattern Subnikov-de Haas oscillations due to carriers with different spin orientations. The analysis of the magnetoresistivity experimental data with the model led us to know accurately the value of the spin-orbit coupling material parameters. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4803093]
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
    Han, XX
    Li, DB
    Yuan, HR
    Sun, XH
    Liu, XL
    Wang, XH
    Zhu, QS
    Wang, ZG
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 241 (13): : 3000 - 3008
  • [2] A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1-xN/GaN Heterostructure
    Liu, Guipeng
    Wu, Ju
    Lu, Yanwu
    Zhang, Biao
    Li, Chengming
    Sang, Ling
    Song, Yafeng
    Shi, Kai
    Liu, Xianglin
    Yang, Shaoyan
    Zhu, Qinsheng
    Wang, Zhanguo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) : 4272 - 4275
  • [3] Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure
    Wang Wei
    Zhou Wen-Zheng
    Wei Shang-Jiang
    Li Xiao-Juan
    Chang Zhi-Gang
    Lin Tie
    Shang Li-Yan
    Han Kui
    Duan Jun-Xi
    Tang Ning
    Shen Bo
    Chu Jun-Hao
    ACTA PHYSICA SINICA, 2012, 61 (23)
  • [4] Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure
    Han, XX
    Wu, JJ
    Li, JM
    Cong, GW
    Liu, XL
    Zhu, QS
    Wang, ZG
    CHINESE PHYSICS LETTERS, 2005, 22 (08) : 2096 - 2099
  • [5] Transport simulation of bulk AlxGa1-xN and the two-dimensional electron gas at the AlxGa1-xN/GaN interface
    Krishnan, MS
    Goldsman, N
    Christou, A
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5896 - 5903
  • [6] The behavior of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures with very thin AlxGa1-xN barriers
    Kalafi, M
    Asgari, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (04): : 321 - 327
  • [7] Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure
    Chen, Jr-Tai
    Forsberg, Urban
    Janzen, Erik
    APPLIED PHYSICS LETTERS, 2013, 102 (19)
  • [8] Two-dimensional electron gas in cubic AlxGa1-xN/GaN heterostructures
    Potthast, S.
    Schoermann, J.
    Fernandez, J.
    As, D. J.
    Lischka, K.
    Nagasawa, H.
    Abe, M.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2091 - 2094
  • [9] Low temperature photoluminescence study of AlxGa1-xN/GaN/AlxGa1-xN heterostructure nanocolumns
    AbdelAll, Naglaa
    ElGhoul, Jaber
    Almokhtar, Mohamed
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (21)
  • [10] The spatial features AlxGa1-xN/GaN heterostructure
    Enisherlova, K. L.
    Immamov, R. M.
    Subbotin, I. M.
    Rusak, T. F.
    Temper, E. M.
    MICRO- AND NANOELECTRONICS 2007, 2008, 7025