Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)

被引：3

作者：

Xu, DP ^{[1
]}

Yang, H

Zhao, DG

Li, JB

Zheng, LX

Wang, YT

Li, SF

Duan, LH

Wu, RH

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 203卷 / 1-2期

关键词：

AlGaN; cubic; hexagonal; SEM; MOVPE;

D O I：

10.1016/S0022-0248(99)00085-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cubic AlGaN films were grown on GaAs(100) substrates by MOVPE. Scanning electron microscope and photoluminescence were used to analyze the surface morphology and the crystalline quality of the epitaxial layers. We found that both NH, and TEGa fluxes have a strong effect on the surface morphology of AlGaN films. A model for the lateral growth mechanism is presented to qualitatively explain this effect. The content of hexagonal AlGaN in the cubic AlGaN films was also related to the NH3 flux. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：40 / 44

页数：5

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