Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver

被引:0
|
作者
Nam, Ilku [1 ]
Moon, Hyunwon [2 ]
Woo, Doo Hyung [3 ]
机构
[1] Pusan Natl Univ, Sch Elect Engn, Pusan 609735, South Korea
[2] Daegu Univ, Sch Elect & Elect Engn, Gyeonsan, South Korea
[3] Catholic Univ Korea, Bucheon Si 420743, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
CMOS; DVB-H; front-end; RF; UHF; wideband; MIXER;
D O I
10.1587/transcom.E95.B.2498
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 mu m deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.
引用
收藏
页码:2498 / 2500
页数:3
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