Nitride band-structure model in a quantum well laser simulator

被引：6
|
作者：
Venkatachalam, Anusha [1 ]
Yoder, P. D. [1 ]
Klein, Benjamin [1 ]
Kulkarni, Aditya [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期
关键词：
built-in polarization; InGaN; k.p; nitrides; quantum well;
D O I：
10.1007/s11082-008-9199-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The two-dimensional quantum Well laser simulator Visible Laser Simulator (VLS) has been extended to simulate III-V nitride based lasers. In this paper, we present details about the laser simulator and focus on the six band k.p solver used to calculate the electronic band structure. The effect of strain on bulk and quantum well electronic dispersion is analyzed, and the influence of the built-in polarization charges on the band diagram is likewise considered.
引用
收藏
页码：295 / 299
页数：5
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