High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

被引：51

作者：

Xu, Zhe ^{[1
]}

Wang, Jinyan ^{[1
]}

Cai, Yong ^{[2
]}

Liu, Jingqian ^{[1
]}

Yang, Zhen ^{[1
]}

Li, Xiaoping ^{[1
]}

Wang, Maojun ^{[1
]}

Yu, Min ^{[1
]}

Xie, Bing ^{[1
]}

Wu, Wengang ^{[1
]}

Ma, Xiaohua ^{[3
]}

Zhang, Jincheng ^{[3
]}

Hao, Yue ^{[3
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Xidian Univ, Microelect Inst, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

基金：

中国国家自然科学基金;

关键词：

GaN; inverter; DCFL; small variations; ALGAN/GAN HEMTS; CIRCUITS;

D O I：

10.1109/LED.2013.2291854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 degrees C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 degrees C, the fabricated inverter operates properly at a supply voltage (V-DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V-TH), 2.4 V for logic-low noise margin (NML), and 3.4 V for logic-high noise margin (NMH). Meanwhile, the inverter exhibits small variations from RT to 300 degrees C in terms of logic voltage swing, V-TH, NML, and NMH with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.

引用

页码：33 / 35

页数：3

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