Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions

被引：2

作者：

Kalinina, E., V ^{[1
]}

Kudoyarov, M. F. ^{[1
]}

Nikitina, I. P. ^{[1
]}

Ivanova, E., V ^{[1
]}

Zabrodskii, V. V. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

silicon carbide; irradiation with Ar ions; quantum efficiency; FAST-NEUTRONS; LUMINESCENCE; DEFECT;

D O I：

10.1134/S1063782620110123

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar ions at a fluence of 1 x 10(10) cm(-2) there are at least two powerful local regions with negative deformation dominant in the structure of silicon carbide. Also, a region with positive deformation is observed in the structure. The formation of localized clusters with negative and positive deformations along with the undisturbed matrix gives rise to linear-type defects that partially relieve stresses in the structure. It is assumed that, upon irradiation with Ar ions, the resulting complex defect structure provides the effect of point-defect gettering and leads to a quantum efficiency of 4H-SiC UV photodetectors that is comparable with that of the initial samples.

引用

页码：1478 / 1482

页数：5

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