Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions

被引：2
|
作者：
Kalinina, E., V [1 ]
Kudoyarov, M. F. [1 ]
Nikitina, I. P. [1 ]
Ivanova, E., V [1 ]
Zabrodskii, V. V. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 11期
基金：
俄罗斯科学基金会;
关键词：
silicon carbide; irradiation with Ar ions; quantum efficiency; FAST-NEUTRONS; LUMINESCENCE; DEFECT;
D O I：
10.1134/S1063782620110123
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar ions at a fluence of 1 x 10(10) cm(-2) there are at least two powerful local regions with negative deformation dominant in the structure of silicon carbide. Also, a region with positive deformation is observed in the structure. The formation of localized clusters with negative and positive deformations along with the undisturbed matrix gives rise to linear-type defects that partially relieve stresses in the structure. It is assumed that, upon irradiation with Ar ions, the resulting complex defect structure provides the effect of point-defect gettering and leads to a quantum efficiency of 4H-SiC UV photodetectors that is comparable with that of the initial samples.
引用
收藏
页码：1478 / 1482
页数：5
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