Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

被引：10

作者：

Peng, Yue ^{[2
]}

Han, Genquan ^{[2
]}

Xiao, Wenwu ^{[1
]}

Wu, Jibao ^{[2
]}

Liu, Yan ^{[2
]}

Zhang, Jincheng ^{[2
]}

Hao, Yue ^{[2
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

[2] Xidian Unvers, State Key Discipline Lab Wide Band Gap Semicond T, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

基金：

中国国家自然科学基金;

关键词：

NEI; Ferroelectric; NC; Memory; Germanium; FeFET;

D O I：

10.1186/s11671-019-2943-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3 is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperaturedependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6nmthick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch.

引用

页数：9

共 30 条

[1] [Anonymous], P 2013 IEEE INT EL D
[2] [Anonymous], 2015, 2015 S VLSI TECHNOLO
[3] [Anonymous], 2017, TECHDIG
[4] [Anonymous], VLSI
[5] Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
Chatterjee, Korok
Kim, Sangwan
Karbasian, Golnaz
Tan, Ava J.
Yadav, Ajay K.
Khan, Asif I.
Hu, Chenming
Salahuddin, Sayeef
[J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) : 1379 - 1382
[6] Chen KY, 2018, 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, P119, DOI 10.1109/VLSIT.2018.8510643
[7] Chung W, 2017, INT EL DEVICES MEET
[8] Nanocrystal nonvolatile memory devices
De Blauwe, J
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) : 72 - 77
[9] MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex
King, YC
King, TJ
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 115 - 118
[10] Krivokapic Z, 2017, INT EL DEVICES MEET, DOI 10.1109/IEDM.2017.8268393

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