Photoemission study of sulfur and oxygen adsorption on GaN(000 (1)over-bar)

被引：12
作者：
Plucinski, L
Colakerol, L
Bernardis, S
Zhang, YF
Wang, SC
O'Donnell, C
Smith, KE
Friel, I
Moustakas, TD
机构：
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
SURFACE SCIENCE | 2006年 / 600卷 / 01期
基金：
美国国家科学基金会;
关键词：
angle resolved photoemission; gallium nitride; sulfur; surface electronic phenomena;
D O I：
10.1016/j.susc.2005.10.021
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface electronic structure of thin film n-type GaN(000 (1) over bar) has been studied using high resolution angle resolved photoemission spectroscopy. Clean surfaces, sulfur-exposed surfaces, and oxygen-exposed surfaces were investigated. Spectra were recorded for the Ga 3d shallow core states and for the valence band states. The sulfur covered surface was found to be inert with respect to subsequent oxygen exposure. For the clean Ga-adlayer terminated (000 (1) over bar) surface, the Fermi level is pinned by surface states at least 1.4 eV below the bottom of the conduction band. Sulfur and oxygen covered surfaces exhibit smaller values for surface band bending, with the Fermi edge lying 0.7-1.0 eV below the conduction band minimum. Finally, we discuss a possible new interpretation for the asymmetry in the shape of Ga 3d photoemission feature. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：116 / 123
页数：8
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