Statistical Properties of an External-Cavity Semiconductor Laser: Experiment and Theory

被引:10
|
作者
Li, Nianqiang [1 ]
Pan, Wei [1 ]
Locquet, Alexandre [2 ,3 ]
Chizhevsky, V. N. [4 ]
Citrin, David S. [2 ,3 ]
机构
[1] Southwest Jiaotong Univ, Ctr Informat Photon & Commun, Chengdu 610031, Peoples R China
[2] Georgia Inst Technol, Dept Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Georgia Tech Lorraine, Georgia Tech, CNRS, UMI 2958, F-57070 Metz, France
[4] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Chaos; data fitting; semiconductor laser; statistical properties; OPTICAL FEEDBACK; DYNAMICS; GENERATION; INTENSITY;
D O I
10.1109/JSTQE.2015.2427523
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We experimentally and numerically study the statistical properties of a semiconductor laser with time-delayed optical feedback. Our systematic analyses show that the statistical distribution of the raw intensity obtained from experiments is better fitted by a Laplacian distribution; both in experiments and simulations, the distribution pattern of the differential signal obtained from two independent intensities, as well as of that computed from its high-order finite differences, converges to a well-fitted Gaussian profile for high pump currents. This helps us to understand the changes in statistical properties of the intensity with varying control parameters and achieve desired entropy sources for random number generators. Furthermore, in numerical simulations, we find the distribution of the differential signal undergoes a marked transition from a Gaussian to Laplacian profile as the feedback rate increases at low to moderate pump currents.
引用
收藏
页码:1 / 8
页数:8
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