A comparative study of electron and positron penetration in silicon dioxide

被引：32

作者：

Dapor, M ^{[1
]}

机构：

[1] IRST, I-38050 Trento, Italy

[2] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2006年 / 151卷 / 03期

关键词：

Monte Carlo simulation; electron and positron penetration in silicon dioxide; impact phenomena;

D O I：

10.1016/j.elspec.2005.12.005

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Many researches are devoted to the study of silicon dioxide, a material of great interest for its use in the micro-electronics industry. This paper aims to compare the behavior of electrons and positrons when impinging on silicon dioxide targets in order to investigate the differences and the similarities. In particular, the inelastic mean free path, the stopping power, the differential elastic scattering cross-section and the total and transport elastic scattering cross-section of electrons and positrons penetrating in silicon dioxide targets are compared in order to better understand their influence in determining the implantation profiles shapes, the mean range of penetration, the maximum range of penetration and the backscattering coefficient as a function of the primary energy of the incident particles. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：182 / 192

页数：11

共 91 条

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