Molecular Simulation Contribution to Porous Low-K Pore Size Determination after Damage by Etch and Wet Clean Processes

被引：0

作者：

Broussous, Lucile ^{[1
]}

Lepinay, Matthieu ^{[1
,2
,3
,4
]}

Coasne, Benoit ^{[5
]}

Licitra, Christophe ^{[2
,3
]}

Bertin, Francois ^{[2
,3
]}

Rouessac, Vincent ^{[4
]}

Ayral, Andre ^{[4
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] CEA, LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France

[4] UM2, CNRS, ENSCM, Inst Europeen Membranes, Pl Eugene Bataillon, F-34095 Montpellier, France

[5] Univ Grenoble Alpes, CNRS, UMR 5588, Lab Interdisciplinaire Phys LIPhy, 140 Rue Phys,Domaine Univ BP 87, F-38402 St Martin Dheres, France

来源：

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII | 2016年 / 255卷

关键词：

Porous low-k; micropores; molecular simulation; process damages; wet cleaning; ELLIPSOMETRIC POROSIMETRY; POROSITY; FILMS;

D O I：

10.4028/www.scientific.net/SSP.255.215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous low-k materials used as insulator for interconnection levels in CMOS devices, are easily damaged during the patterning processes. Pore size characterization after material damage is challenging due to the chemical modification induced by the applied process. Numerical simulation of solvent adsorption on silica and functionalized silica surfaces was used to improve material pore size determination by ellipso-porosimetry, taking into account the modifications of surface/solvent interactions.

引用

页码：215 / 222

页数：8

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