Temperature dependence of current-voltage of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes

被引：0
|
作者：
Vazquez, Arely [1 ]
Molina, Joel [1 ]
机构：
[1] Inst Nacl Astrofis Opt & Elect INAOE, Elect, Puebla, Mexico
来源：
2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC) | 2022年
关键词：
Schottky barrier height; temperature; fabrication; current-voltage; Schottky barrier diode;
D O I：
10.1109/LAEDC54796.2022.9908217
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25-85 degrees C were carried out. The Schottky barrier height (SBH) and ideality factor n calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (titanium and aluminum) during the fabrication process were characterized to obtain electrical and physical parameters.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Temperature dependence of current-voltage characteristics of Al/p-Si (100) Schottky barrier diodes
    Yuksel, O. Faruk
    PHYSICA B-CONDENSED MATTER, 2009, 404 (14-15) : 1993 - 1997
  • [2] Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
    Erturk, K.
    Haciismailoglu, M. C.
    Bektore, Y.
    Ahmetoglu, M.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2008, 22 (14): : 2309 - 2319
  • [3] Temperature dependence of the current-voltage characteristics of the Al/Rhodamine-101/p-Si(100) contacts
    Karatas, S
    Temirci, C
    Çakar, M
    Türüt, A
    APPLIED SURFACE SCIENCE, 2006, 252 (06) : 2209 - 2216
  • [4] Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts
    Aydin, M. E.
    Gullu, O.
    Yildirim, N.
    PHYSICA B-CONDENSED MATTER, 2008, 403 (01) : 131 - 138
  • [5] Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures
    Karatas, S
    Altindal, S
    Çakar, M
    PHYSICA B-CONDENSED MATTER, 2005, 357 (3-4) : 386 - 397
  • [6] ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES
    IOANNOU, DE
    HUANG, YJ
    MCLARTY, PK
    JOHNSON, SM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K223 - K226
  • [7] Temperature-dependent barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes
    Tugluoglu, N
    Karadeniz, S
    Acar, S
    Kasap, M
    CHINESE PHYSICS LETTERS, 2004, 21 (09) : 1795 - 1798
  • [8] HIGH-BARRIER AL/P-SI SCHOTTKY DIODES
    ASHOK, S
    GIEWONT, K
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 462 - 464
  • [9] Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions
    Kaya, M.
    Cetin, H.
    Boyarbay, B.
    Gok, A.
    Ayyildiz, E.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (40)
  • [10] The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions
    Aydogan, S
    Saglam, M
    Türüt, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (09) : 2665 - 2676
12345