Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters

被引：92

作者：

Bae, Joonho ^{[1
]}

Kim, Hyunjin ^{[2
,3
]}

Zhang, Xiao-Mei ^{[1
,4
]}

Dang, Cuong H. ^{[2
,3
]}

Zhang, Yue ^{[4
]}

Choi, Young Jin ^{[5
,6
]}

Nurmikko, Arto ^{[2
,3
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

[3] Brown Univ, Dept Phys, Providence, RI 02912 USA

[4] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China

[5] MyongJi Univ, Dept Phys, Yongin 449728, South Korea

[6] MyongJi Univ, Dept Nano Sci & Engn, Yongin 449728, South Korea

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 09期

基金：

美国国家科学基金会;

关键词：

SILICON NANOWIRE; PHOTOVOLTAIC APPLICATIONS; OPTICAL-ABSORPTION; BUILDING-BLOCKS; ARRAYS; DIAMETER; CELLS;

D O I：

10.1088/0957-4484/21/9/095502

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of similar to 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at -0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.

引用

页数：5

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