High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition

被引：236

作者：

Zheng, Jingying ^{[1
]}

Yan, Xingxu ^{[2
]}

Lu, Zhixing ^{[1
]}

Qiu, Hailong ^{[1
]}

Xu, Guanchen ^{[1
]}

Xu, Zhou ^{[3
]}

Peng, Wang ^{[2
]}

Pan, Xiaoqing ^{[2
,4
,5
]}

Liu, Kaihui ^{[3
]}

Jiao, Liying ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Chem, Mol Engn Minist Educat, Key Lab Organ Optoelectron, Beijing 100084, Peoples R China

[2] Nanjing Univ, Coll Engn Appl Sci, Collaborative Innovat Ctr Adv Microstructures, Natl Lab Solid State Microstructures, Nanjing 210093, Peoples R China

[3] Peking Univ, Sch Phys, Ctr Nanochem, Collaborative Innovat Ctr Quantam Matter, Beijing 100871, Peoples R China

[4] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA

[5] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 13期

基金：

中国国家自然科学基金;

关键词：

LARGE-SCALE; TRANSITION; MONOLAYER; EVOLUTION; FILMS; BULK;

D O I：

10.1002/adma.201604540

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The controlled synthesis of high-quality multilayer (ML) MoS2 flakes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated. These CVD-grown ML MoS2 flakes exhibit much higher mobility and current density than mechanically exfoliated ML flakes due to the reduced contact resistance which mainly resulted from direct contact between the lower MoS2 layers and electrodes.

引用

页数：6

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