Transport mechanisms and energy band diagram in ZnO/porous Si light-emitting diodes

被引：54

作者：

Dimova-Malinovska, D ^{[1
]}

Nikolaeva, M ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

来源：

VACUUM | 2002年 / 69卷 / 1-3期

关键词：

porous Si; heterostructures; electron affinity; energy band diagram;

D O I：

10.1016/S0042-207X(02)00336-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A porous silicon/c-Si heterostructure has been formed by the method of stain etching. The transport mechanism of the diode has been investigated using the current-voltage characteristics (I-V) measured at different temperatures (296380 K). A model based upon the multi-step tunnelling of the carriers at reverse and low forward bias (< 1 V) and for field tunnelling across a narrow barrier at higher forward bias (> 1.5 V) is proposed. A band-gap diagram is proposed for the ZnO/PS/c-Si heterostructure. The electron affinity of the quantum-confined Si is determined to be 3.69 +/- 0.08 eV. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：227 / 231

页数：5

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