Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices

被引：24

作者：

Li, Jinchai ^{[1
]}

Yang, Weihuang ^{[1
]}

Li, Shuping ^{[1
]}

Chen, Hangyang ^{[1
]}

Liu, Dayi ^{[1
]}

Kang, Junyong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Fujian Key Lab Semicond Mat & Applicat, Mat & Devices State Educ Minist, Xiamen 361005, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

关键词：

LIGHT-EMITTING-DIODES; ALGAN; ALXGA1-XN;

D O I：

10.1063/1.3248026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The internal electric field is modified by using Mg-and Si-delta-codoped AlxGa1-xN/AlyGa1-yN superlattices (SLs). The first-principles simulation results show that the internal electric field in SL has been significantly intensified due to the charge transferring from Si-doped interface to Mg-doped interface. Accordingly, the Mg- and Si-delta-codoped p-type Al0.2Ga0.8N/GaN SLs are grown by metalorganic vapor phase epitaxy and higher hole concentration as much as twice of that in modulation-doped SL has been achieved, as determined by Hall effect measurements. Furthermore, by applying Mg- and Si-delta-codoped AlxGa1-xN/AlyGa1-yN SLs with high Al content as the p-type layers, we have fabricated deep ultraviolet light emitting diodes with superior current-voltage characteristics by lowering Mg-acceptor activation energy. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248026]

引用

页数：3

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