Recent developments in photonic devices for telecommunication applications in Taiwan

被引:3
作者
Tu, YK
Lin, W
Liaw, JW
Hwang, CJ
机构
[1] Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom. Co. Ltd., Yang-Mei, Tao-Yuan, 32617, 12, Lane 551, Mintsu Road
关键词
D O I
10.1007/BF00326198
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report recent activities and achievements on the development of photonic devices for telecommunication applications. Opto-electronic devices such as high performance 1.55 mu m complex-coupled InGaAsP-InP distributed feedback (DFB) and 1.3 mu m uncooled AlInGaAs-InP lasers, the InGaAs-InP p-i-n photodetector on semi-insulating substrate, the 0.98 mu m InGaAs-GaAs-InGaP pumping laser, and 12-channel laser and detector arrays, are presented. Work on the development of in-house vertical integration for the fabrication of a 1.55 mu m single frequency transmitter, a 1.3 mu m multimode transmitter and receiver, and an Er-doped fibre amplifier, and their applications in system trials in the Taiwan National Information Infrastructure network, is described.
引用
收藏
页码:1259 / 1267
页数:9
相关论文
共 49 条
  • [21] INGAAS PIN PHOTODIODES ON SEMIINSULATING INP SUBSTRATES WITH BANDWIDTH EXCEEDING 14 GHZ
    HO, WJ
    DAI, TA
    CHUANG, ZM
    LIN, W
    TU, YK
    WU, MC
    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (07) : 1295 - 1298
  • [22] INGAAS PIN PHOTODIODES GROWN BY LIQUID-PHASE EPITAXY USING ERBIUM GETTERING
    HO, WJ
    WU, MC
    LIN, YM
    TU, YK
    [J]. ELECTRONICS LETTERS, 1994, 30 (01) : 83 - 84
  • [23] LIAW JY, 1991, P ANN C CHIN SOC MAT, P260
  • [24] LIAW SK, 1995, CHINESE J MAT SCI, V27, P101
  • [25] LOW THRESHOLD 1.5 MU-M QUANTUM-WELL LASERS WITH CONTINUOUS LINEAR-GRADED-INDEX INGAASP LAYERS PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    LIN, W
    CHANG, CY
    TU, YK
    DAI, TA
    HO, WJ
    LEE, GY
    SHI, TT
    SHIAO, HP
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1239 - 1241
  • [26] THE INXGA1-XASYP1-Y (0.53-LESS-THAN-X-LESS-THAN-1, 0-LESS-THAN-Y-LESS-THAN-1) COMPOUND SEMICONDUCTOR FOR LD STRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    LIN, W
    TU, YK
    DAI, TA
    HO, WJ
    LEE, GY
    SHIAO, HP
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 451 - 458
  • [27] LIN W, 1996, IN PRESS INT C MET V
  • [28] LIN W, 1995, P EL DEV MAT S EDMS, P245
  • [29] LIN W, 1995, CHINESE I ELECT ENG, V2, P55
  • [30] LIN W, 1994, P INT EL DEV MAT S E