Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion Model

被引：9

作者：

Chiu, Chia-Sung ^{[1
]}

Chen, Kun-Ming ^{[1
]}

Huang, Guo-Wei ^{[1
]}

Hsiao, Chih-Hua ^{[1
]}

Liao, Kuo-Hsiang ^{[1
]}

Chen, Wen-Lin ^{[1
]}

Wang, Sheng-Chiun ^{[1
]}

Chen, Ming-Yi ^{[2
]}

Yang, Yu-Chi ^{[2
]}

Wang, Kai-Li ^{[2
]}

Wu, Lin-Kun ^{[3
]}

机构：

[1] Natl Nano Device Labs, Hsinchiu 300, Taiwan

[2] United Microelect Corp, Hsinchiu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu 30050, Taiwan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

nonlinear; LDMOS; X-parameters; load-pull; polyharmonic distortion model;

D O I：

10.1109/MWSYM.2009.5165862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An annular-structure lateral-diffused metal-oxide semiconductor (LDMOS) RF transistor with polyharmonic distortion (PHD) model characterized by nonlinear vector network analyzer is described in this paper. The devices were fabricated using a 0.5 mu m LDMOS process. The DC, small-signal, and large-signal characteristics of RF LDMOS transistors with annular-structures were also studied in this work. Using the PHD model, the accuracy of intermodulation and time waveform is verified. Furthermore, the model via X-parameter shows good agreement without optimization.

引用

页码：977 / +

页数：2

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