A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

被引：26

作者：

Syamal, Binit ^{[1
,2
]}

Zhou, Xing ^{[1
]}

Ben Chiah, Siau ^{[1
]}

Jesudas, Anand M. ^{[1
]}

Arulkumaran, Subramaniam ^{[3
]}

Ng, Geok Ing ^{[1
,3
]}

机构：

[1] Nanyang Technol Univ, NOVITAS, Nanoelect Ctr Excellence, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] GLOBALFOUNDRIES, Singapore 738406, Singapore

[3] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Compact model (CM); current collapse (CC); drain lag; gate lag; high electron-mobility transistors (HEMTs); interface traps; pulsed I-V; FIELD-EFFECT TRANSISTORS; ELECTRON-MOBILITY TRANSISTORS; CURRENT COLLAPSE; FREQUENCY-DEPENDENCE; ALGAN/GAN HEMTS; GAAS-MESFETS; DENSITY; SEMICONDUCTOR; GENERATION; DISPERSION;

D O I：

10.1109/TED.2016.2533165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive scalable trap-charge model for the dc and pulsed I-V modeling of GaN high electron-mobility transistor is presented. While interface traps are considered for dc I-V modeling, surface states and traps in the AlGaN barrier and GaN buffer are considered for the pulsed I-V model. A surface-potential-based model is presented for interface traps, which is then adapted to the current model for the dc modeling. For the pulsed I-V modeling, a semiempirical approach is proposed for gate lag as well as both gate-lag and drain-lag conditions. The model is able to capture the effects of gate (V-gq) and drain (V-dq) quiescent biases as well as the stress time (T-OFF), and is validated with both numerical simulation and measurement data. Finally, for the accurate transient simulations in switching applications, the emission of electrons is also modeled in Verilog-A using an asymptotic solution of a differential equation, which can be a better alternative to that of the RC subcircuit approach.

引用

页码：1478 / 1485

页数：8

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