Two dimensional boron diffusion determination by scanning capacitance microscopy

被引：3
作者：
Giannazzo, F
Raineri, V
Priolo, F
机构：
[1] CNR, IMETEM, I-95121 Catania, Italy
[2] Univ Catania, INFM, I-95129 Catania, Italy
[3] Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷
关键词：
diffusion; interstitials; scanning capacitance microscopy;
D O I：
10.1016/S0921-5107(01)00999-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(T)wo-dimensional boron diffusion has been investigated on sub-micron patterned samples implanted with I keV B ions and diffused at 1100 degreesC for different times. Carrier profiles were measured by scanning capacitance microscopy (SCM) whose depth and lateral resolution was enhanced by a double bevelling sample preparation. Implants were performed at two different doses (1 x 10(14) and 1 X 10(15) cm(-2)) into patterned wafers with several stripe widths ranging from 0.5 to 5 mum. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on the implanted dose. The phenomenon has been related to the influence of Si self-interstitials on the B transient diffusion. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：220 / 223
页数：4
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