Remarkable improvements in the electrochemical performance of Si materials for Li-ion batteries have been recently achieved, but the inherent volume change of Si still induces electrode expansion and external cell deformation. Here, the void structure in Si-encapsulating hollow carbons is optimized in order to minimize the volume expansion of Si-based anodes and improve electrochemical performance. When compared to chemical etching, the hollow structure is achieved via electroless etching is more advanced due to the improved electrical contact between carbon and Si. Despite the very thick electrodes (30 approximate to 40 m), this results in better cycle and rate performances including little capacity fading over 50 cycles and 1100 mA h g1 at 2C rate. Also, an in situ dilatometer technique is used to perform a comprehensive study of electrode thickness change, and Si-encapsulating hollow carbon mitigates the volume change of electrodes by adoption of void space, resulting in a small volume increase of 18% after full lithiation corresponding with a reversible capacity of about 2000 mA h g1.
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Magasinski, Alexandre
;
Zdyrko, Bogdan
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Zdyrko, Bogdan
;
Kovalenko, Igor
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Kovalenko, Igor
;
Hertzberg, Benjamin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Hertzberg, Benjamin
;
Burtovyy, Ruslan
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Burtovyy, Ruslan
;
Huebner, Christopher F.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Streamline Nanotechnol Inc, Atlanta, GA USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Huebner, Christopher F.
;
Fuller, Thomas F.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Fuller, Thomas F.
;
Luzinov, Igor
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Luzinov, Igor
;
Yushin, Gleb
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Magasinski, Alexandre
;
Zdyrko, Bogdan
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Zdyrko, Bogdan
;
Kovalenko, Igor
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Kovalenko, Igor
;
Hertzberg, Benjamin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Hertzberg, Benjamin
;
Burtovyy, Ruslan
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Burtovyy, Ruslan
;
Huebner, Christopher F.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Streamline Nanotechnol Inc, Atlanta, GA USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Huebner, Christopher F.
;
Fuller, Thomas F.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Fuller, Thomas F.
;
Luzinov, Igor
论文数: 0引用数: 0
h-index: 0
机构:
Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA
Luzinov, Igor
;
Yushin, Gleb
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAClemson Univ, Sch Mat Sci & Engn, Clemson, SC 29631 USA