GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

被引：29

作者：

Mano, T. ^{[1
]}

Kuroda, T. ^{[1
]}

Mitsuishi, K. ^{[1
]}

Nakayama, Y. ^{[1
]}

Noda, T. ^{[1
]}

Sakoda, K. ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

aluminium compounds; gallium arsenide; gallium compounds; liquid phase epitaxial growth; photoluminescence; quantum dot lasers; stimulated emission;

D O I：

10.1063/1.3026174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.

引用

页数：3

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