Time and Frequency Domain Characterization of Transistor Self-Heating

被引：46

作者：

Makovejev, Sergej ^{[1
,2
]}

Olsen, Sarah H. ^{[1
]}

Kilchytska, Valeriya ^{[2
]}

Raskin, Jean-Pierre ^{[2
]}

机构：

[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Pulsed I-V; RF; self-heating; silicon on insulator (SOI); STRAINED SI MOSFETS; SOI MOSFETS; EXTRACTION; CONDUCTANCE; TEMPERATURE; TRANSPORT; DEGRADATION; RELIABILITY; SIMULATION; RESISTANCE;

D O I：

10.1109/TED.2013.2259174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.

引用

页码：1844 / 1851

页数：8

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