Chemical bonding states and atomic distribution within Zn(S,O) film prepared on CIGS/Mo/glass substrates by chemical bath deposition

被引：17
作者：
Ahn, K.
Jeon, J. H.
Jeong, S. Y.
Kim, J. M.
Ahn, H. S. [2 ]
Kim, J. P. [3 ]
Jeong, E. D. [3 ]
Cho, C. R. [1 ]
机构：
[1] Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nano Fus Technol, Miryang 627760, South Korea
[2] Korea Maritime Univ, Dept Nano Semicond, Pusan 606791, South Korea
[3] Korea Basic Sci Inst, Busan Ctr, Pusan 609735, South Korea
来源：
CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 06期
关键词：
Chemical bath deposition; Zinc sulfide; Depth profile; Surface states; ZNS THIN-FILMS; BUFFER LAYERS; SOLAR-CELLS; GROWTH;
D O I：
10.1016/j.cap.2012.04.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zn(S,O) thin films fabricated on CIGS/Mo/glass substrates by using chemical bath deposition (CBD) in acidic and basic solutions were studied. The Zn(S, O) thin films prepared in acidic solution [A-Zn(S,O) thin film] showed better crystallinity and a more compact surface morphology with larger grains than those prepared in basic solution [B-Zn(S,O) thin film] did. From the analysis of the chemical bonding states, at the initial growth step, the concentration ratio of Zn-O/Zn-S bonds in A-Zn(S, O) thin films was found to be approximately zero, while that in B-Zn(S, O) thin films was approximately equal to 1. The elemental distribution according to depth, determined by secondary ion mass spectroscopy (SIMS), was shown to be uniform throughout both the A-and B-Zn(S, O) thin films. To reduce the number of Zn-O bonds in the B-Zn(S, O) thin films, the samples were post-annealed at up to 300 degrees C under vacuum, after which the concentration ratio of Zn-O/Zn-S bonds decreased by about 71% without any change in the crystallinity or surface morphology. (C) 2012 Elsevier B.V. All rights reserved.
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收藏
页码：1465 / 1469
页数：5
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