Negative-bias temperature instability induced electron trapping

被引：5

作者：

Campbell, J. P. ^{[1
]}

Cheung, K. P. ^{[1
]}

Suehle, J. S. ^{[1
]}

Oates, A. ^{[2
]}

机构：

[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] TSMC Ltd, Hsinchu 30077, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2963368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Despite four decades of research, the physics responsible for the negative-bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/detrapping mechanism or a hydrogen depassivation mechanism. In this study, we present NBTI-induced changes in the peak transconductance which indicate the presence of a third mechanism involving electron trapping/detrapping. The presence of this electron trapping/detrapping component adds further complexity to the very complicated NBTI phenomenon. (c) 2008 American Institute of Physics.

引用

页数：3

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