Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

被引：68

作者：

Batra, Neha ^{[1
,2
]}

Gope, Jhuma ^{[2
]}

Vandana ^{[2
]}

Panigrahi, Jagannath ^{[1
,2
]}

Singh, Rajbir ^{[1
,2
]}

Singh, P. K. ^{[1
,2
]}

机构：

[1] Acad Sci & Innovat Res AcSIR, CSIR, Natl Phys Lab, New Delhi 110012, India

[2] CSIR, NPL, Network Inst Solar Energy, Silicon Solar Cell Grp, New Delhi 110012, India

来源：

AIP ADVANCES | 2015年 / 5卷 / 06期

关键词：

ATOMIC-LAYER-DEPOSITION; OXIDE THIN-FILMS; ALUMINUM-OXIDE; CRYSTALLINE SILICON; RECOMBINATION; SI; STABILITY; CHEMISTRY; IODINE; GROWTH;

D O I：

10.1063/1.4922267

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of deposition temperature (T-dep) and subsequent annealing time (t(anl)) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q(F). The interface defect density (D-it) decreases with increase in T-dep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T-dep >= 200 degrees C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min). (C) 2015 Author(s).

引用

页数：10

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