Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films

被引：14

作者：

Ambrosone, G. ^{[2
,3
]}

Basa, D. K. ^{[1
]}

Coscia, U. ^{[2
,4
]}

Fathallah, M. ^{[5
]}

机构：

[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[2] Complesso Univ Monte S Angelo, Dipartimento Sci Fis, I-80126 Naples, Italy

[3] Complesso Univ Monte S Angelo, INFM, CNR, Unita Napoli, I-80126 Naples, Italy

[4] Complesso Univ Monte S Angelo, CNISM, Unita Napoli, I-80126 Naples, Italy

[5] King Saud Univ, Coll Sci, Riyadh 11451, Saudi Arabia

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 12期

关键词：

amorphous semiconductors; Fourier transform spectra; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors;

D O I：

10.1063/1.3042242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon carbon alloy films of different carbon compositions were prepared by plasma enhanced chemical vapor deposition system using silane and methane with helium dilution and were characterized by structural and optical techniques to understand the microstructural and overall disorder in amorphous semiconductors. The study demonstrates that the increase of the microstructural disorder results in an increase in the overall disorder and the local defect density induced by carbon incorporation seems to dominate the overall defect structure of the network.

引用

页数：4

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