Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

被引：22
作者：
Contaret, T
Romanjek, K
Boutchacha, T
Ghibaudo, G
Boeuf, F
机构：
[1] IMEP, CNRS, UMR, INPG,UJF,ENSERG, F-38016 Grenoble, France
[2] USTO, Inst Elect, Oran, Algeria
[3] STMicroelect, F-38921 Crolles, France
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 01期
关键词：
D O I：
10.1016/j.sse.2005.10.035
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents low frequency noise investigations in ultrathin oxide MOSFETs of advanced bulk CMOS technology. Simple analytical models for the drain and gate-leakage current noise are presented and analyzed with respect to noise measurements. The developed formulations of the different 1/f noise sources are based on a flat band voltage concept and proves very effective in describing the overall drain current noise as well as the gate current one. In particular, the huge excess drain noise experimentally observed in large area devices is explained by sum of both drain and gate current noise contributions using gate-partitioning coefficients. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：63 / 68
页数：6
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