Preparation and effects of post-annealing temperature on the electrical characteristics of Li-N co-doped ZnSnO thin film transistors

被引：15
作者：
Dai, Shiqian [1 ]
Wang, Tao [1 ]
Li, Ran [1 ]
Zhou, Dongzhan [2 ]
Peng, Yunfei [1 ]
Wang, Hailong [1 ]
Zhang, Xiqing [1 ]
Wang, Yongsheng [1 ]
机构：
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Inst Optoelect Technol, Beijing 100044, Peoples R China
[2] China Bldg Mat Acad, Beifing 100024, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2017年 / 43卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Thin film transistor; Electrical properties; Electronic materials; ANNEALING TEMPERATURE; PERFORMANCE; COMBINATORIAL; TRANSPARENT; RESISTIVITY; STABILITY;
D O I：
10.1016/j.ceramint.2016.12.145
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, transparent Li-N co-doped ZnSnO (ZTO: (Li, N)) thin film transistors (TFTs) with a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering at room temperature. Emphasis was placed on investigating the effects of post-annealing temperature on their physical and electrical properties. An appropriate post-annealing temperature contributes not only to achieving good quality thin films, but also to improving the electrical performance of the ZTO: (Li, N) TFTs. The ZTO: (Li, N) TFTs annealed at 675 degrees C showed the best electrical characteristics with a high saturation mobility of 26.8 cm(2)V(-l)s(-1), a threshold voltage of 6.0 V and a large on/off current ratio of 4.5x10(7).
引用
收藏
页码：4926 / 4929
页数：4
相关论文
共 38 条
[1]   Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering [J].
Chen, LY ;
Chen, WH ;
Wang, JJ ;
Hong, FCN ;
Su, YK .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5628-5630
[2]   Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature [J].
Cho, Doo-Hee ;
Yang, Shinhyuk ;
Byun, Chunwon ;
Shin, Jaeheon ;
Ryu, Min Ki ;
Park, Sang-Hee Ko ;
Hwang, Chi-Sun ;
Chung, Sung Mook ;
Cheong, Woo-Seok ;
Yoon, Sung Min ;
Chu, Hye-Yong .
APPLIED PHYSICS LETTERS, 2008, 93 (14)
[3]   Effects of growth temperature on performance and stability of zinc oxide thin film transistors fabricated by thermal atomic layer deposition [J].
Cho, Sung Woon ;
Ahn, Cheol Hyoun ;
Yun, Myeong Gu ;
Kim, So Hee ;
Cho, Hyung Koun .
THIN SOLID FILMS, 2014, 562 :597-602
[4]   Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process [J].
Choi, Jun Young ;
Kim, Sang Sig ;
Lee, Sang Yeol .
APPLIED PHYSICS LETTERS, 2012, 100 (02)
[5]   Antireflective ZnSnO/Ag bilayer-based transparent source and drain electrodes for transparent thin film transistors [J].
Choi, Kwang-Hyuk ;
Koo, Hyun-Woo ;
Kim, Tae-Woong ;
Kim, Han-Ki .
APPLIED PHYSICS LETTERS, 2012, 100 (26)
[6]   Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process [J].
Do, Jong Chil ;
Kim, Ho Beom ;
Ahn, Cheol Hyoun ;
Cho, Hyung Koun ;
Lee, Ho Seong .
JOURNAL OF MATERIALS RESEARCH, 2012, 27 (17) :2293-2298
[7]   Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].
Fortunato, E. ;
Barquinha, P. ;
Martins, R. .
ADVANCED MATERIALS, 2012, 24 (22) :2945-2986
[8]   Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor [J].
Fuh, Chur-Shyang ;
Liu, Po-Tsun ;
Huang, Wei-Hsun ;
Sze, Simon M. .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (11) :1103-1105
[9]   Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering [J].
Gulen, M. ;
Yildirim, G. ;
Bal, S. ;
Varilci, A. ;
Belenli, I. ;
Oz, M. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (02) :467-474
[10]   Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications [J].
Ha, Tae-Jun ;
Dodabalapur, Ananth .
APPLIED PHYSICS LETTERS, 2013, 102 (12)
1234