The valence band alignment at ultrathin SiO2/Si interfaces

被引：151

作者：

Alay, JL ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHI HIROSHIMA 739,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 03期

关键词：

D O I：

10.1063/1.363895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nn the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2Si(100) interface. (C) 1997 American Institute of Physics.

引用

页码：1606 / 1608

页数：3