Effect of ionizing radiation on MOS capacitors

被引：40

作者：

Chauhan, RK ^{[1
]}

Chakrabarti, P ^{[1
]}

机构：

[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India

来源：

MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 03期

关键词：

MOS capacitor; radiation effects; MOS devices;

D O I：

10.1016/S0026-2692(01)00152-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical model of metal-oxide-semiconductor (MOS) capacitor has been developed to investigate the effect of ionizing radiation on the characteristics of the device during exposure and also in the post-irradiated condition. The model takes into account the effect of radiation-induced changes in silicon-dioxide as well as in silicon substrate of MOS structure. It is found that the total high frequency capacitance of the device during exposure to radiation is different from its value in the post-irradiated condition, The results of the study are expected to be useful in predicting the behavior of MOS based devices operating in radiation environment. (C) 2002 Published by Elsevier Science Ltd.

引用

页码：197 / 203

页数：7

共 20 条

[11]

MA TP, 1989, IONISING RAD EFFECTS

[12] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[13] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J].

MCLEAN, FB ;

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1506-1512

[14]

MOLL JL, 1959, WESCON CONVENTION 3, P32

[15] RADIATION-INDUCED INTERFACE STATES OF POLY-SI GATE MOS CAPACITORS USING LOW-TEMPERATURE GATE OXIDATION [J].

NARUKE, K ;

YOSHIDA, M ;

MAEGUCHI, K ;

TANGO, H .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4054-4058

[16] MIS SOLAR-CELLS - REVIEW [J].

PULFREY, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1308-1317

[17] RADIATION-INDUCED INTERFACE-STATE GENERATION IN MOS DEVICES [J].

SCHWANK, JR ;

WINOKUR, PS ;

SEXTON, FW ;

FLEETWOOD, DM ;

PERRY, JH ;

DRESSENDORFER, PV ;

SANDERS, DT ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1178-1184

[18] CORRELATION BETWEEN PREIRRADIATION CHANNEL MOBILITY AND RADIATION-INDUCED INTERFACE-TRAP CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SCOFIELD, JH ;

TRAWICK, M ;

KLIMECKY, P ;

FLEETWOOD, DM .

APPLIED PHYSICS LETTERS, 1991, 58 (24) :2782-2784

[19] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+

[20] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS [J].

WINOKUR, PS ;

SCHWANK, JR ;

MCWHORTER, PJ ;

DRESSENDORFER, PV ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1453-1460

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