Effect of ionizing radiation on MOS capacitors

被引：40

作者：

Chauhan, RK ^{[1
]}

Chakrabarti, P ^{[1
]}

机构：

[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India

来源：

MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 03期

关键词：

MOS capacitor; radiation effects; MOS devices;

D O I：

10.1016/S0026-2692(01)00152-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical model of metal-oxide-semiconductor (MOS) capacitor has been developed to investigate the effect of ionizing radiation on the characteristics of the device during exposure and also in the post-irradiated condition. The model takes into account the effect of radiation-induced changes in silicon-dioxide as well as in silicon substrate of MOS structure. It is found that the total high frequency capacitance of the device during exposure to radiation is different from its value in the post-irradiated condition, The results of the study are expected to be useful in predicting the behavior of MOS based devices operating in radiation environment. (C) 2002 Published by Elsevier Science Ltd.

引用

页码：197 / 203

页数：7

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