A relation model of gate oxide yield and reliability

被引:17
作者
Kim, KO [1 ]
Kuo, W
Luo, W
机构
[1] Univ Alberta, Dept Math & Stat Sci, Edmonton, AB T6G 2G1, Canada
[2] Texas A&M Univ, Dept Ind Engn, College Stn, TX 77843 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/j.microrel.2003.09.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The relationship between yield and reliability is obviously important for predicting and improving reliability during the early production stage, especially for new technologies. Previous research developed models to relate yield and reliability when reliability is defined as the probability of a device having no reliability defects. This definition of reliability is not a function of mission time and thus is not consistent with reliability estimated from the time-to-first-failure data which is commonly used. In this paper, we present a simple model to tic oxide yield to time-dependent reliability by combining the oxide time to breakdown model with a defect size distribution. We show that existing models become special cases when a single mission time is considered. As the proposed reliability function has a decreasing failure rate, the result is useful for a manufacturer seeking to find an optimal burn-in policy for burn-in temperature, burn-in voltage, and burn-in time. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:425 / 434
页数:10
相关论文
共 16 条
[1]   OPTIMUM PREVENTIVE MAINTENANCE POLICIES [J].
BARLOW, R ;
HUNTER, L .
OPERATIONS RESEARCH, 1960, 8 (01) :90-100
[2]  
Casella G., 2021, STAT INFERENCE
[3]   THE USE AND EVALUATION OF YIELD MODELS IN INTEGRATED-CIRCUIT MANUFACTURING [J].
CUNNINGHAM, JA .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1990, 3 (02) :60-71
[4]  
HUSTON HH, 1992, INT REL PHY, P268, DOI 10.1109/RELPHY.1992.187656
[5]  
JENSEN F, 1991, RELIABILITY 91, P739
[6]   Modeling manufacturing yield and reliability [J].
Kim, T ;
Kuo, W .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1999, 12 (04) :485-492
[7]   An overview of manufacturing yield and reliability modeling for semiconductor products [J].
Kuo, W ;
Kim, T .
PROCEEDINGS OF THE IEEE, 1999, 87 (08) :1329-1344
[8]  
Kuo W., 1998, RELIABILITY YIELD ST
[9]  
Kuper F, 1996, 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, P17, DOI 10.1109/RELPHY.1996.492055
[10]   MODELING AND CHARACTERIZATION OF GATE OXIDE RELIABILITY [J].
LEE, JC ;
CHEN, IC ;
HU, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2268-2278