Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

被引：20

作者：

Tan, Zhen ^{[1
]}

Zhao, Lianfeng ^{[1
]}

Wang, Jing ^{[1
]}

Xu, Jun ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 08期

关键词：

GATE; THICKNESS; GASB;

D O I：

10.1149/2.003308ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of the Al2O3 interfacial layer (IL) insertion and the neutralized (NH4)(2)S solution passivation on HfO2/GaSb MOS devices were investigated. The interface trap density (Dit) was reduced by similar to 20% for samples with an Al2O3 IL. Sulfur passivation with the neutralized (NH4)(2)S solution could effectively prevent the oxidization of the substrates, as such reducing the equivalent oxide thickness by 30%. Consequently, a combination of the neutralized (NH4)(2)S solution passivation and an Al2O3 IL insertion is found to be a promising technique to improve the performance of Hf-based high-k/GaSb MOS devices. (c) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P61 / P62

页数：2

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