Rhodium doped InGaAs: A superior ultrafast photoconductor

被引：24
作者：
Kohlhaas, R. B. [1 ]
Globisch, B. [1 ]
Nellen, S. [1 ]
Liebermeister, L. [1 ]
Schell, M. [1 ]
Richter, P. [2 ]
Koch, M. [2 ]
Semtsiv, M. P. [3 ]
Masselink, W. T. [3 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Einsteinufer 37, D-10587 Berlin, Germany
[2] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[3] Humboldt Univ, Dept Phys, Newtonstr 15, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 10期
关键词：
CHEMICAL-VAPOR-DEPOSITION; 1.55; MU-M; CARRIER DYNAMICS; FE; FEMTOSECOND; GROWTH; LEVEL; INP;
D O I：
10.1063/1.5016282
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs: Rh is used as an ultrafast photoconductor, carrier lifetimes as short as 100 fs for optically excited electrons are measured. Rh doping compensates free carriers so that a near intrinsic carrier concentration can be achieved. At the same time, InGaAs: Rh exhibits a large electron mobility of 1000 cm(2)/V s. Therefore, this material is a very promising candidate for application as a semi-insulating layer, THz antenna, or semiconductor saturable absorber mirror. Published by AIP Publishing.
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页数：4
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