A Wideband Oscillator Exploiting Multiple Resonances in Lithium Niobate MEMS Resonator

被引:12
作者
Kourani, Ali [1 ]
Lu, Ruochen [1 ]
Gong, Songbin [1 ]
机构
[1] Univ Illinois, Elect & Comp Engn Dept, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
Lithium niobate; MEMS; oscillator; overtone; phase noise; synthesizers; NOISE;
D O I
10.1109/TUFFC.2020.2989623
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
This article presents a comprehensive guide to codesign lithium niobate (LiNbO3) lateral overtone bulk acoustic resonators (LOBARs) and voltage-controlledoscillators (VCOs) using discrete components on a printed circuit board (PCB). The analysis focuses on understanding the oscillator-level tradeoffs between the number of locked tones, frequency stability, tuning range, power consumption, and phase noise. Moreover, this article focuses on understanding the relationship between the abovementioned specifications and the different LOBAR parameters, such as electromechanical coupling (k(t)(2)), quality factor (Q), transducer design, and the resonator size. As a result of this study, the first voltage-controlled MEMS oscillator (VCMO) based on LiNbO3 LOBAR is demonstrated. Our LOBAR excites over 30 resonantmodes in the range of 100-800MHz with a frequency spacing of 20 MHz. The VCMO consists of an LOBAR in a closed loop with two amplification stages and a varactor-embedded tunable LC tank. By adjusting the bias voltage applied to the varactor, the tank can be tuned to change the closed-loop gain and phase responses of the oscillatorso that the Barkhausenconditions are satisfied for a particular resonantmode. The tank is designed to allowthe proposed VCMO to lock to any of the ten overtones ranging from 300 to 500 MHz. These ten tones are characterized by averageQs of 2100, k(2) t of 1.5%, figure of merit (FOM = Qk(t)(2)) of 31.5 enabling low phase noise, and low-power oscillators crucial for Internet of Things (IoT). Due to the high Qs of the LiNbO3 LOBAR, the measured VCMO shows a close-in phase noise of -100 dBc/Hz at 1-kHz offset from a 300-MHz carrier and a noise floor of -153 dBc/Hz while consuming 9 mW. With further optimization, this VCMO can lead to direct radio frequency (RF) synthesis for ultralow-power transceivers in multimode IoT nodes.
引用
收藏
页码:1854 / 1866
页数:13
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