Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

被引:5
|
作者
Lee, JC
Croft, GD
Liou, JJ [1 ]
Young, WR
Bernier, J
机构
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
[2] Harris Semicond Inc, Technol Dev Dept, Melbourne, FL 32901 USA
[3] Harris Semicond Inc, Reliabil Engn, Melbourne, FL 32901 USA
关键词
D O I
10.1016/S0026-2714(99)00049-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models caned the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码:579 / 593
页数:15
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