Formation of pre-silicide layers below Ni1-xPtxSi/Si interfaces

被引：4

作者：

Thron, A. M. ^{[1
]}

Pennycook, T. J. ^{[2
,3
]}

Chan, J. ^{[4
]}

Luo, W. ^{[5
]}

Jain, A. ^{[6
]}

Riley, D. ^{[6
]}

Blatchford, J. ^{[6
]}

Shaw, J. ^{[6
]}

Vogel, E. M. ^{[4
]}

Hinkle, C. L. ^{[4
]}

van Benthem, K. ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[4] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[5] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[6] Texas Instruments Inc, Adv CMOS, Dallas, TX 75243 USA

来源：

ACTA MATERIALIA | 2013年 / 61卷 / 07期

基金：

美国国家科学基金会;

关键词：

Interfaces; TEM; Diffusion; Silicidation; SCHOTTKY-BARRIER HEIGHT; NI; DIFFUSION; STABILITY; MICROSTRUCTURE; ATOMS;

D O I：

10.1016/j.actamat.2013.01.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of a pre-silicide layer below Ni1-xPtxSi films is reported with structure and composition distinctly different from previously observed diffusion layers. It was found that during two-step rapid thermal annealing Ni interstitial diffusion can kinetically dominate over the formation of Ni silicide, which results in a metastable pre-silicide layer. Aberration corrected scanning transmission electron microscopy experiments have revealed Ni to occupy interstitial and substitutional sites in the pre-silicide layer. Rapid thermal annealing and Pt alloying determines the stoichiometry and thickness of the layer, while the point defect configurations give rise to lowering of the associated Schottky barrier heights. The pre-silicide layer effectively limits diffusion of Ni into the substrate and therefore allows for the low-temperature growth of Ni2Si and NiSi. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：2481 / 2488

页数：8

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