Performance and reliability of ultra thin CVD HfO2 gate dielectrics with dual poly-Si gate electrodes

被引：79
|
作者：
Lee, SJ [1 ]
Luan, HF [1 ]
Lee, CH [1 ]
Jeon, TS [1 ]
Bai, WP [1 ]
Senzaki, Y [1 ]
Roberts, D [1 ]
Kwong, DL [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
来源：
2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年
关键词：
D O I：
10.1109/VLSIT.2001.934985
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MOSFETs with high quality ultra thin (EOTsimilar to10.3Angstrom) HfO2 gate stacks and self-aligned dual poly-Si gate are fabricated and characterized. Both n- and p-MOSFETs show good electron and hole mobility, respectively, and excellent sub-threshold swings. In addition, HfO2 gate stack exhibits excellent thermal stability with poly-Si gate up to 1050degreesC/30s gate activation annealing and shows excellent TDDB reliability characteristics with negligible charge trapping and SILC under high-field stressing.
引用
收藏
页码：133 / 134
页数：2
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