Performance and reliability of ultra thin CVD HfO2 gate dielectrics with dual poly-Si gate electrodes

被引：79

作者：

Lee, SJ ^{[1
]}

Luan, HF ^{[1
]}

Lee, CH ^{[1
]}

Jeon, TS ^{[1
]}

Bai, WP ^{[1
]}

Senzaki, Y ^{[1
]}

Roberts, D ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934985

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MOSFETs with high quality ultra thin (EOTsimilar to10.3Angstrom) HfO2 gate stacks and self-aligned dual poly-Si gate are fabricated and characterized. Both n- and p-MOSFETs show good electron and hole mobility, respectively, and excellent sub-threshold swings. In addition, HfO2 gate stack exhibits excellent thermal stability with poly-Si gate up to 1050degreesC/30s gate activation annealing and shows excellent TDDB reliability characteristics with negligible charge trapping and SILC under high-field stressing.

引用

页码：133 / 134

页数：2

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