Characterization of Field Emission Properties of β-Na0.33V2O5 Single Crystalline Nanowires
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作者:
Nguyen, Trang T. H.
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机构:
Sungkyunkwan Univ S Korea, Dept Phys, Seoul, South KoreaSungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
Nguyen, Trang T. H.
[1
]
Shakir, Imran
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Sungkyunkwan Univ S Korea, Dept Phys, Seoul, South KoreaSungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
Shakir, Imran
[1
]
Shahid, Muhammad
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Sungkyunkwan Adv Inst Nanotechnol, Seoul, South KoreaSungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
Shahid, Muhammad
[2
]
Kang, Dae Joon
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Sungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
Sungkyunkwan Adv Inst Nanotechnol, Seoul, South Korea
Sungkyunkwan Univ S Korea, Dept Energy Sci, Seoul, South KoreaSungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
Kang, Dae Joon
[1
,2
,3
]
机构:
[1] Sungkyunkwan Univ S Korea, Dept Phys, Seoul, South Korea
[2] Sungkyunkwan Adv Inst Nanotechnol, Seoul, South Korea
[3] Sungkyunkwan Univ S Korea, Dept Energy Sci, Seoul, South Korea
来源:
2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC)
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2012年
关键词:
beta-Na0.33V2O5;
nanowires;
Chemical solution deposition;
Field emission;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
High quality sodium vanadate (beta-Na0.33V2O5) nanowires were grown directly on conducting silicon substrates by a facile chemical solution deposition method without employing catalyst, surfactant or carrier gas. The beta-Na0.33V2O5 nanowires have typical average diameter of about 120 nm and length over 7 mu m. The growth mechanism for beta-Na0.33V2O5 nanowires are also proposed in detail. The electrical conductivity of beta-Na0.33V2O5 nanowires measured along the growth direction was found to be about 0.57 S/cm. This is in good accordance with other results reported elsewhere. The field emission characteristics of beta-Na0.33V2O5 nanowires were also investigated. It was found that high current density (550 mu A/cm(2)) and low turn-on field voltage (0.6 V/mu m) as well as high stability were obtained.
机构:
Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, JapanJapan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan
Ohwada, Kenji
Yamauchi, Touru
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机构:
Univ Tokyo, Mat Design & Characterizat Lab, Inst Solid State Phys, Kashiwa, Chiba 2778581, JapanJapan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan
Yamauchi, Touru
Fujii, Yasuhiko
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CROSS, Tokai, Ibaraki 3191106, JapanJapan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan
Fujii, Yasuhiko
Ueda, Yutaka
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机构:
Univ Tokyo, Mat Design & Characterizat Lab, Inst Solid State Phys, Kashiwa, Chiba 2778581, JapanJapan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan