12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode

被引：63

作者：

You, Jong-Bum ^{[1
]}

Park, Miran ^{[1
]}

Park, Jeong-Woo ^{[1
]}

Kim, Gyungock ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 22期

关键词：

D O I：

10.1364/OE.16.018340

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of similar to 8 GHz and the data transmission up to 12.5Gbit/s. (C) 2008 Optical Society of America

引用

页码：18340 / 18344

页数：5

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