Pressure Study of BiS2-Based Superconductors Bi4O4S3 and La(O,F)BiS2

被引:128
作者
Kotegawa, Hisashi [1 ]
Tomita, Yusuke [1 ]
Tou, Hideki [1 ]
Izawa, Hiroki [2 ]
Mizuguchi, Yoshikazu [2 ]
Miura, Osuke [2 ]
Demura, Satoshi [3 ]
Deguchi, Keita [3 ]
Takano, Yoshihiko [3 ]
机构
[1] Kobe Univ, Dept Phys, Kobe, Hyogo 6588530, Japan
[2] Tokyo Metropolitan Univ, Dept Elect & Elect Engn, Hachioji, Tokyo 1920397, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
关键词
Bi4O4S3; La(O; F)BiS2; pressure;
D O I
10.1143/JPSJ.81.103702
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the electrical resistivity measurements under pressure for the recently discovered BiS2-based layered superconductors Bi4O4S3 and La(O,F)BiS2. In Bi4O4S3, the transition temperature T-c decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS2, on the other hand, T-c initially increases with increasing pressure and then decreases above similar to 1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of T-c is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.
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页数:4
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