Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

被引:17
作者
Khurgin, Jacob B. [1 ]
Jena, Debdeep [2 ]
Ding, Yujie J. [3 ]
机构
[1] Johns Hopkins Univ, Dept ECE, Baltimore, MD 21218 USA
[2] Univ Notre Dame, Dept EE, Notre Dame, IN 46556 USA
[3] Lehigh Univ, Dept ECE, Bethlehem, PA 18015 USA
关键词
D O I
10.1063/1.2961120
中图分类号
O59 [应用物理学];
学科分类号
摘要
We analyze the influence of isotope disorder on longitudinal optical (LO) phonon modes in GaN and then study the scattering by disordered LO phonons in the channel of high power transistor. Results indicate that as a larger number of LO phonons gets excited, a more efficient cooling of electrons can be accomplished and most of the spurious hot phonon effects can be mitigated leading to significant improvement in the saturation velocity. To the best of our knowledge this is the first ever example of disorder playing constructive role in the performance of room-temperature electronic devices.
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页数:3
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