High-brightness long-wavelength semiconductor disk lasers

被引:107
作者
Schulz, Nicola [1 ]
Hopkins, John-Mark [2 ]
Rattunde, Marcel [1 ]
Burns, David [2 ]
Wagner, Joachim [1 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[2] Univ Strathclyde, Inst Photon IOP, Glasgow G4 0NW, Lanark, Scotland
关键词
semiconductor lasers; infrared; VECSEL (vertical external cavity surface emitting lasers); OPSDL (optically pumped semiconductor disk lasers);
D O I
10.1002/lpor.200710037
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A review on the recent developments in the field of long-wavelength (lambda > 1.2 mu m) high-brightness optically-pumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different HI-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 pm and 5.3 mu m are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.
引用
收藏
页码:160 / 181
页数:22
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