Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

被引：640

作者：

Kong, Wei-Yu ^{[1
]}

Wu, Guo-An ^{[1
]}

Wang, Kui-Yuan ^{[1
]}

Zhang, Teng-Fei ^{[1
]}

Zou, Yi-Feng ^{[1
]}

Wang, Dan-Dan ^{[1
]}

Luo, Lin-Bao ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 48期

关键词：

SCHOTTKY JUNCTION; ULTRAVIOLET PHOTODETECTORS; AVALANCHE PHOTODETECTOR; GA2O3; OXIDE;

D O I：

10.1002/adma.201604049

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (beta-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.

引用

页码：10725 / +

页数：9

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