Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

被引:640
作者
Kong, Wei-Yu [1 ]
Wu, Guo-An [1 ]
Wang, Kui-Yuan [1 ]
Zhang, Teng-Fei [1 ]
Zou, Yi-Feng [1 ]
Wang, Dan-Dan [1 ]
Luo, Lin-Bao [1 ]
机构
[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
关键词
SCHOTTKY JUNCTION; ULTRAVIOLET PHOTODETECTORS; AVALANCHE PHOTODETECTOR; GA2O3; OXIDE;
D O I
10.1002/adma.201604049
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (beta-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
引用
收藏
页码:10725 / +
页数:9
相关论文
共 37 条
[1]   Tunable Graphene-Silicon Heterojunctions for Ultrasensitive Photodetection [J].
An, Xiaohong ;
Liu, Fangze ;
Jung, Yung Joon ;
Kar, Swastik .
NANO LETTERS, 2013, 13 (03) :909-916
[2]   Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects [J].
Assefa, Solomon ;
Xia, Fengnian ;
Vlasov, Yurii A. .
NATURE, 2010, 464 (7285) :80-U91
[3]   Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector [J].
Boruah, Buddha Deka ;
Mukherjee, Anwesha ;
Misra, Abha .
NANOTECHNOLOGY, 2016, 27 (09)
[4]   Photocurrent Distribution in Graphene-CdS Nanowire Devices [J].
Dufaux, Thomas ;
Boettcher, Jens ;
Burghard, Marko ;
Kern, Klaus .
SMALL, 2010, 6 (17) :1868-1872
[5]   Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors [J].
Feng, Wei ;
Wang, Xiaona ;
Zhang, Jia ;
Wang, Lifeng ;
Zheng, Wei ;
Hu, PingAn ;
Cao, Wenwu ;
Yang, Bin .
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (17) :3254-3259
[6]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[7]   Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires [J].
Hsu, Cheng-Liang ;
Lu, Ying-Ching .
NANOSCALE, 2012, 4 (18) :5710-5717
[8]  
Joshi N.V., 1990, PHOTOCONDUCTIVITY AR
[9]   Graphene-GaN Schottky diodes [J].
Kim, Seongjun ;
Seo, Tae Hoon ;
Kim, Myung Jong ;
Song, Keun Man ;
Suh, Eun-Kyung ;
Kim, Hyunsoo .
NANO RESEARCH, 2015, 8 (04) :1327-1338
[10]   High-performance ultraviolet photodetectors based on solution-grown ZnS nanobelts sandwiched between graphene layers [J].
Kim, Yeonho ;
Kim, Sang Jin ;
Cho, Sung-Pyo ;
Hong, Byung Hee ;
Jang, Du-Jeon .
SCIENTIFIC REPORTS, 2015, 5