High temperature operation of AlGaN/GaN HEMT

被引：15

作者：

Adachi, N ^{[1
]}

Tateno, Y ^{[1
]}

Mizuno, S ^{[1
]}

Kawano, A ^{[1
]}

Nikaido, J ^{[1
]}

Sano, S ^{[1
]}

机构：

[1] Eudyna Devices Inc, Showa, Yamanashi 4093883, Japan

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

high temperature; HEMT; power amplifiers;

D O I：

10.1109/MWSYM.2005.1516642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated high temperature operation of AlGaN/GaN HEMTs. At channel temperature of 269 degC, a linear gain of 12.3 dB and a power added efficiency of 53.6 % were achieved at 2.14 GRz, under 50 V operation. These are sufficient performance to practical application. At channel temperature of 368 degC, the linear gain was 10.4 dB and a power added efficiency of 43.9 % was achived. We also investigated the temperature dependence of equivalent circuit values, and found that the temperature dependence of saturated output power and the linear gain is originated from the temperature dependence of electron velocity in the channel.

引用

页码：507 / 510

页数：4

共 5 条

[1]

Kanamura M., 2003, INT C SOL STAT DEV M, P916

[2]

KIKKAWA T, 2004, 2004 MTT S MICR S JU, V3, P1347

[3]

KIKKAWA T, 2002, MICR S 2002 IEEE MTT, V3, P1815

[4] High-temperature electronics - A role for wide bandgap semiconductors? [J].