Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

被引：4

作者：

Liu, Xingfang ^{[1
]}

Chen, Yu ^{[2
]}

Sun, Changzheng ^{[3
]}

Guan, Min ^{[1
]}

Zhang, Yang ^{[1
]}

Zhang, Feng ^{[1
]}

Sun, Guosheng ^{[1
]}

Zeng, Yiping ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

[3] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

NANOMATERIALS | 2015年 / 5卷 / 03期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

nano-textured; 4H-SiC; morphology; graphene; evolution; EPITAXIAL GRAPHENE; SILICON-CARBIDE; HIGH-QUALITY; LARGE-AREA; RAMAN-SPECTROSCOPY; FILMS; TRANSPORT;

D O I：

10.3390/nano5031532

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nano-textured 4H-SiC homoepitaxial layers (NSiCLs) were grown on 4H-SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp(2) disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp(2) disorders was obtained under Ar atmosphere at 1900 K.

引用

页码：1532 / 1543

页数：12

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